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The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilaneZHENG, Y.-J; ENGSTROM, J. R; ZHANG, J et al.Surface science. 2001, Vol 470, Num 1-2, pp 131-140, issn 0039-6028Article

Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templatesKAI WANG; QIAN GONG; HAIFEI ZHOU et al.Applied surface science. 2014, Vol 291, pp 45-47, issn 0169-4332, 3 p.Conference Paper

Self-limited SiH₂Cl₂ gas source molecular beam epitaxy on Si(100)FEHRENBACHER, M; RAUSCHER, H; BEHM, R. J et al.Surface science. 2001, Vol 491, Num 1-2, pp 275-299, issn 0039-6028Article

A study on GaP/Si heterostructures grown by GS-MBEYU, J.-Z; CHEN, B; YU, Z et al.SPIE proceedings series. 1998, pp 9-12, isbn 0-8194-3012-9Conference Paper

Ge surface segregation during Si_1-xGe_x(011) gas-source molecular beam epitaxy from Si₂H₆ and Ge₂H₆TAYLOR, N; KIM, H; GREENE, J. E et al.Surface science. 2001, Vol 475, Num 1-3, pp 171-180, issn 0039-6028Article

Temperature oscillation as a real-time monitoring of the growth of 3C-SiC on Si substrateSAITO, Eiji; KONNO, Atsushi; ITO, Takashi et al.Applied surface science. 2008, Vol 254, Num 19, pp 6235-6237, issn 0169-4332, 3 p.Conference Paper

Optical properties of TlInGaAs/TlInP/InP laser diodesFUJIWARA, A; MATSUMOTO, T; KRISHNAMURTHY, D et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 11, pp 2662-2665, issn 1862-6300, 4 p.Conference Paper

Influence of crystal perfection on the reverse leakage current of the SiGe/Si p-n heterojunction diodesLIU, X. F; LIU, J. P; LI, J. P et al.Journal of crystal growth. 1999, Vol 201202, pp 551-555, issn 0022-0248Conference Paper

Arsenic doping kinetics in silicon during gas source molecular beam epitaxyXIE, M.-H; ZHANG, J; FERNANDEZ, J. M et al.Surface science. 1998, Vol 397, Num 1-3, pp 164-169, issn 0039-6028Article

Gas source homoepitaxy on Si(113) : the interrelation of H-induced reconstructions and growth morphologyDORNA, V; WANG, Z; KÖHLER, U et al.Surface science. 1998, Vol 401, Num 1, pp L375-L382, issn 0039-6028Article

Texture analysis of GaAs nanowiresJARVIS, V; BITTEN, J. F; LAPIERRE, R. R et al.Semiconductor science and technology. 2011, Vol 26, Num 2, issn 0268-1242, 025014.1-025014.5Article

Substrate temperature dependence of Si growth by an electron beam irradiation technique using a Si₂H₆ gas sourceHIROSE, F; SAKAMOTO, H.Applied surface science. 1998, Vol 135, Num 1-4, pp 293-296, issn 0169-4332Article

Gas source MBE grown Al_0.52In_0.48P photovoltaic detectorLI, C; ZHANG, Y. G; GU, Y et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 501-503, issn 0022-0248, 3 p.Conference Paper

Delta p⁺-doped InGaAs grown by gas source MBE for novel optoelectronic memorySAKATA, H; NAGAO, Y; MATSUSHIMA, Y et al.Journal of crystal growth. 1999, Vol 201202, pp 1065-1068, issn 0022-0248Conference Paper

Réalisation d'empilements d'îlots quantiques emettant à 1,55μm avec une grande efficacite lumineuse = Quantum island stack realisation emetting at 1,55 μm with great luminous efficiencyBERTRU, N; FRECHENGUES, S; DROUOT, V et al.Journées nationales de microélectronique et optoélectronique. 1999, 2Vol, 2 p.Conference Paper

High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μmLAMBERT, B; LE CORRE, A; DROUOT, V et al.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 143-145, issn 0268-1242Article

In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopySAKAMOTO, H; TAKAKUWA, Y; ENTA, Y et al.Applied surface science. 1997, Vol 117-18, pp 77-81, issn 0169-4332Conference Paper

Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)LIU, J. L; CAI, S. J; JIN, G. L et al.Journal of crystal growth. 1999, Vol 200, Num 1-2, pp 106-111, issn 0022-0248Article

High-power AlGaN/GaN HFET with lower on-state resistance and higher switching time for an inverter circuitYOSHIDA, S; LI, J; WADA, T et al.IEE proceedings. Circuits, devices and systems. 2004, Vol 151, Num 3, pp 207-210, issn 1350-2409, 4 p.Conference Paper

P-N defect in GaNP studied by optically detected magnetic resonanceCHEN, W. M; THINH, N. Q; VORONA, I. P et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 399-402, issn 0921-4526, 4 p.Conference Paper

Long-wavelength emission of Ga_0.3In_0.7N_xAs_1-x quantum dots grown on GaAs(001)TU, C. W; NISHIKAWA, A; HONG, Y. G et al.Proceedings - Electrochemical Society. 2003, pp 21-25, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Growth of MgCaO on GaNONSTINE, A. H; GILA, B. P; KIM, J et al.Proceedings - Electrochemical Society. 2003, pp 344-349, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

Optical study of germanium nanostructures grown on a Si(118) vicinal substrateBREMOND, G; SERPENTINI, M; SOUIFI, A et al.Microelectronics journal. 1999, Vol 30, Num 4-5, pp 357-362, issn 0959-8324Article

Epitaxial growth and photoluminescence of Si/pure-Ge/Si quantum structures on Si(311) substratesAMANO, K; KOBAYASHI, M; OHGA, A et al.Semiconductor science and technology. 1998, Vol 13, Num 11, pp 1277-1283, issn 0268-1242Article